| PART |
Description |
Maker |
| KSD1691 KSD1691OS KSD1691YS KSD1691GS KSD1691YSTST |
NPN Epitaxial Silicon Transistor
Low Collector-Emtter Saturation Voltage & Large Collector Current
Feature
|
Fairchild Semiconductor
|
| BC847S KC847S |
Low collector-emitter saturation voltage
|
TY Semiconductor Co., Ltd
|
| 2SD1999 |
Low saturation voltage. Contains diode between collector and emitter.
|
TY Semiconductor Co., L...
|
| DP030U |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| PS21961-4 |
IGBT Module; Continuous Collector Current, Ic:3A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:21.3W; Collector Emitter Voltage, Vceo:600V; Package/Case:Super Mini
|
POWEREX INC
|
| 2SD2402 |
High current capacitance. Low collector saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SB906 |
Low collector saturation voltage. High power dissipation.
|
TY Semiconductor Co., Ltd
|
| SMBTA5607 |
PNP Silicon AF Transistor Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
| DN500F |
NPN Silicon Transistor (Extremely low collector-to-emitter saturation voltage)
|
AUK[AUK corp]
|
| 2SD1621 |
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
